翻訳と辞書 Words near each other ・ Chemical weapon ・ Chemical weapon proliferation ・ Chemical weapons and the United Kingdom ・ Chemical Weapons Convention ・ Chemical weapons in the Rif War ・ Chemical weapons in World War I ・ Chemical Wedding ・ Chemical Wedding (film) ・ Chemical WorkBench ・ Chemical Workers' Union ・ Chemical Workers' Union (Czechoslovakia) ・ Chemical Workers' Union (UK) ・ Chemical World ・ Chemical, Biological, Radiological and Explosive Defence Group ・ Chemical, Energy, Paper, Printing, Wood and Allied Workers' Union ・ Chemical-mechanical planarization ・ Chemicalize.org ・ Chemically assisted degradation of polymers ・ Chemically defined medium ・ Chemically Imbalanced (Chris Webby album) ・ Chemically Imbalanced (Ying Yang Twins album) ・ Chemically induced dimerization ・ Chemically linked Fab ・ Chemically modified electrode ・ Chemically strengthened glass ・ Chemicals (EP) ・ Chemicals (Smile Empty Soul album) ・ Chemicals (song) ・ Chemicals + Circuitry ・ Chemicals Convention, 1990 Dictionary Lists mini英和辞書 mini和英辞書 Webster 1913 Latin-English FOLDOC Wikipedia English ウィキペディア

翻訳と辞書　辞書検索 [ 開発暫定版 ] スポンサード リンク Chemical-mechanical planarization ： ウィキペディア英語版 Chemical-mechanical planarization Chemical Mechanical Polishing/Planarization is a process of smoothing surfaces with the combination of chemical and mechanical forces. It can be thought of as a hybrid of chemical etching and free abrasive polishing. ==Description== The process uses an abrasive and corrosive chemical slurry (commonly a colloid) in conjunction with a polishing pad and retaining ring, typically of a greater diameter than the wafer. The pad and wafer are pressed together by a dynamic polishing head and held in place by a plastic retaining ring. The dynamic polishing head is rotated with different axes of rotation (i.e., not concentric). This removes material and tends to even out any irregular topography, making the wafer flat or planar. This may be necessary to set up the wafer for the formation of additional circuit elements. For example, CMP can bring the entire surface within the depth of field of a photolithography system, or selectively remove material based on its position. Typical depth-of-field requirements are down to Angstrom levels for the latest 22 nm technology. 抄文引用元・出典: フリー百科事典『 ウィキペディア（Wikipedia）』 ■ウィキペディアで「Chemical-mechanical planarization」の詳細全文を読む スポンサード リンク 翻訳と辞書 : 翻訳のためのインターネットリソース Copyright(C) kotoba.ne.jp 1997-2016. All Rights Reserved.